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Document ID

Issued Date

Revised Date

Revision

Page.

FMBT2907AW

DS-231134

2009/08/10

2010/03/10

B

9

PNP SMD Transistor

PARAMETER

Collector-base breakdown voltage

Collector-emitter

voltage (3)

breakdown

Emitter-base

voltage

breakdown

CONDITIONS

Symbol

V

(BR)CBO

V

CEO

(BR)

V

EBO

(BR)

I

CEX

Min.

-60

-60

-5.0

UNIT

V

V

V

nA

A

o

Off characteristics

I = -10uA, I = 0

cE

I = -10mA, I = 0

cB

I = -10uA, I = 0

EC

Collector cutoff current

V

= -30Vdc, V

= -0.5Vdc

CE

EB(off)

PARAMETER

Dc current gain

CONDITIONS

Symbol

h

FE

75

100

100

UNIT

V

50

On characteristics (3)

I = -0.1mA, V

= -10V

cCE

I = -1.0mA, V

= -10V

cCE

I = -10mA, V

= -10V

cCE

I = -150mA, V

= -10V

cCE

Collector-emitter

Saturation voltage

Base-emitter

Saturation voltage

I = -150mA, I = -15mA

cB

I = -500mA, I = -50mA

cB

I = 150mA, I = -15mA

cB

I = 500mA, I = -50mA

cB

V

-1.3

V

CE(sat)

V

BE(sat)

PARAMETER

Input capacitance

CONDITIONS

Symbol

C

ibo

200

UNIT

Small-signal characteristics

I = -50mA, V

= -20V, f = 100MHz

CCE

Current-gain-bandwidth product (4)

Output capacitance

V

= -10V, I = 0, f = 1.0MHz

CB

E

V

= -2V, I = 0, f = 1.0MHz

EB

C

f

T

C

obo

pF

MHz

pF

PARAMETER

CONDITIONS

Symbol

10

UNIT

Switching characteristics

Delay time

Rise time

V

= -30V, I = -150mA, I

= -15mA

CC

C

B1

60

ns

45

Max.

Base cutoff current

I

BL

V

= -30Vdc, V

= -0.5Vdc

CE

EB(off)

-50

-50

-0.4

-1.6

-2.6

8.0

30

3. Pulse test: pulse width

300μs, uty ycle

2.0%

dc

≦

≦

I = -500mA, V

= -10V

cCE

4. f is defined as the frequency at which h extrapolates to unity.

T

fe

Turn-on time

40

Turn-out time

Storage time

Fall time

V

= -6V, I = -150mA, I

=I

-15mA

CC

C

B1

B2=

225

280

Min.

Max.

300

100

Min.

Max.

Min.

Max.