AS4C2M32SA datasheet(19/54 Pages) ALSC

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Table 14. D.C. Characteristics (VDD = 3.3V ± 0.3V, TA = -40~85°C)

Description/Test condition

Symbol

-5

-6

-7

Unit Note

Max.

Operating Current (One bank active)

tRC ≥ tRC(min), Outputs Open, Input signal one

transition per one cycle

IDD1

120

Precharge Standby Current in non-power down mode

tCK = 15ns, CS# ≥ VIH(min), CKE ≥ VIH

Input signals are changed every 2clks

IDD2N

Precharge Standby Current in non-power down mode

tCK = ∞, CLK ≤ VIL(max), CKE ≥ VIH

IDD2NS

Precharge Standby Current in power down mode

tCK = 15ns, CKE ≤ VIL(max)

IDD2P

Precharge Standby Current in power down mode

tCK = ∞, CKE ≤ VIL(max)

IDD2PS

Active Standby Current in non-power down mode

tCK = 15ns, CKE ≥ VIH(min), CS# ≥ VIH(min)

Input signals are changed every 2clks

IDD3N

Active Standby Current in non-power down mode

CKE ≥ VIH(min), CLK ≤ VIL(max), tCK = ∞

IDD3NS

Operating Current (Burst mode)

tCK =tCK(min), Outputs Open, Multi-bank interleave

IDD4

120

100

3, 4

Refresh Current

tRC ≥ tRC(min)

IDD5

150

130

120

Self Refresh Current

CKE ≤ 0.2V ; for other inputs VIH≧VDD - 0.2V, VIL ≤ 0.2V

IDD6

AS4C2M32SA-6TIN

AS4C2M32SA-6TCN

AS4C2M32SA-7TCN

Confidential

-19/54-

Rev.1.0 Sep. 2015

AS4C2M32SA Datasheet(PDF) 19 Page - Alliance Semiconductor Corporation

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