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MIC4102 Datasheet(PDF) 16 Page - Microchip Technology |
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MIC4102 Datasheet(HTML) 16 Page - Microchip Technology |
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16 / 28 page ![]() MIC4102 DS20005575A-page 16 2016 Microchip Technology Inc. The on-time is the time the high-side switch is conducting. In most power supply topologies, the diode is reverse-biased during the switching cycle off-time. FIGURE 6-1: Optional Bootstrap Diode. 6.3 Gate Drive Power Dissipation Power dissipation in the output driver stage is mainly caused by charging and discharging the gate to source and gate to drain capacitance of the external MOSFET. Figure 6-2 shows a simplified equivalent circuit of the MIC4102 driving an external high-side MOSFET. FIGURE 6-2: MIC4102 Driving an External MOSFET. 6.4 Dissipation During the External MOSFET Turn-On Energy from capacitor CB is used to charge up the input capacitance of the MOSFET (CGD and CGS). The energy delivered to the MOSFET is dissipated in the three resistive components, RON, RG, and RG_FET. RON is the on resistance of the upper driver MOSFET in the MIC4102. RG is the series resistor (if any) between the driver IC and the MOSFET. RG_FET is the gate resistance of the MOSFET. RG_FET is usually listed in the power MOSFET’s specifications. The ESR of capacitor CB and the resistance of the connecting etch can be ignored because they are much less than RON and RG_FET. The effective capacitance of CGD and CGS is difficult to calculate because they vary non-linearly with ID, VGS, and VDS. Fortunately, most power MOSFET specifications include a typical graph of total gate charge vs. VGS. Figure 6-3 shows a typical gate charge curve for an arbitrary power MOSFET. This chart shows that for a gate voltage of 10V, the MOSFET requires about 23.5 nC of charge. The energy dissipated by the resistive components of the gate drive circuit during turn-on is calculated as: EQUATION 6-7: but EQUATION 6-8: so EQUATION 6-9: FIGURE 6-3: Typical Gate Charge vs. VGS. C B V IN EXTERNAL DIODE HS HB HO V DD LO LEVEL SHIFT PWM V SS Q FF _ Q HS HB HO EXTERNAL FET V DD C B R G R G_FET R ON R OFF C GD C GS E 1 2 --- C ISS V GS 2 = Where: CISS Total Gate Capacitance of MOSFET QC V = E 1 2 --- Q G V GS = |
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