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MIC4102 Datasheet(PDF) 16 Page - Microchip Technology

Part # MIC4102
Description  100V Half-Bridge MOSFET Driver with Anti-Shoot-Through Protection
PDF  28 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC4102 Datasheet(HTML) 16 Page - Microchip Technology

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MIC4102
DS20005575A-page 16
 2016 Microchip Technology Inc.
The on-time is the time the high-side switch is
conducting. In most power supply topologies, the diode
is reverse-biased during the switching cycle off-time.
FIGURE 6-1:
Optional Bootstrap Diode.
6.3
Gate Drive Power Dissipation
Power dissipation in the output driver stage is mainly
caused by charging and discharging the gate to source
and gate to drain capacitance of the external MOSFET.
Figure 6-2 shows a simplified equivalent circuit of the
MIC4102 driving an external high-side MOSFET.
FIGURE 6-2:
MIC4102 Driving an
External MOSFET.
6.4
Dissipation During the External
MOSFET Turn-On
Energy from capacitor CB is used to charge up the input
capacitance of the MOSFET (CGD and CGS). The
energy delivered to the MOSFET is dissipated in the
three resistive components, RON, RG, and RG_FET. RON
is the on resistance of the upper driver MOSFET in the
MIC4102. RG is the series resistor (if any) between the
driver IC and the MOSFET. RG_FET is the gate
resistance of the MOSFET. RG_FET is usually listed in
the power MOSFET’s specifications. The ESR of
capacitor CB and the resistance of the connecting etch
can be ignored because they are much less than RON
and RG_FET.
The effective capacitance of CGD and CGS is difficult to
calculate because they vary non-linearly with ID, VGS,
and
VDS. Fortunately, most power MOSFET
specifications include a typical graph of total gate
charge vs. VGS. Figure 6-3 shows a typical gate charge
curve for an arbitrary power MOSFET. This chart
shows that for a gate voltage of 10V, the MOSFET
requires about 23.5 nC of charge. The energy
dissipated by the resistive components of the gate
drive circuit during turn-on is calculated as:
EQUATION 6-7:
but
EQUATION 6-8:
so
EQUATION 6-9:
FIGURE 6-3:
Typical Gate Charge vs.
VGS.
C
B
V
IN
EXTERNAL
DIODE
HS
HB
HO
V
DD
LO
LEVEL
SHIFT
PWM
V
SS
Q
FF
_
Q
HS
HB
HO
EXTERNAL
FET
V
DD
C
B
R
G
R
G_FET
R
ON
R
OFF
C
GD
C
GS
E
1
2
---
C
ISS
V
GS
2
=
Where:
CISS
Total Gate Capacitance of MOSFET
QC
V
=
E
1
2
---
Q
G
V
GS
=



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