May 2015

DocID027815 Rev 1

1/14

This is preliminary information on a new product now in development

or undergoing evaluation. Details are subject to change without notice.

www.st.com

STL4LN80K5

N-

channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5

Power MOSFET in a PowerFLAT™ 5x6 VHV package

Datasheet - preliminary data

Figure 1: Internal schematic diagram

Features

Order code

STL4LN80K5

800 V

2.6 Ω

3 A



Industry’s lowest R



Industry’s best FoM (figure of merit)



Ultra low-gate charge



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STL4LN80K5

4LN80K5

PowerFLAT™ 5x6 VHV

Tape and reel

1

2

3

4

PowerFLA

T™ 5x6 VHV

5

6

7

8

1

2

3

4

Top View

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)