STL4LN80K5

Electrical ratings

DocID027815 Rev 1

3/14

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 30

V

3

A

1.9

A

IDM

(1)

Drain current (pulsed)

12

A

38

W

dv/dt

(2)

Peak diode recovery voltage slope

15

V/ns

dv/dt

(3)

MOSFET dv/dt ruggedness

50

Operating junction temperature

- 55 to 150

°C

Storage temperature

Notes:

(1)

Pulse width limited by safe operating area

(2)

(3)

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case

3.3

°C/W

(1)

Thermal resistance junction-pcb

59

°C/W

Notes:

(1)

When mounted on FR-4 board of 1 inch², 2 oz Cu

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive (pulse width limited by

Tjmax)

TBD

A

TBD

mJ