STL4LN80K5

Electrical characteristics

DocID027815 Rev 1

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Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain

current

-

3

A

(1)

Source-drain

current (pulsed)

-

12

A

VSD

(2)

Forward on

voltage

-

1.6

V

Reverse

recovery time

for inductive load switching and diode

recovery times")

-

TBD

ns

Reverse

recovery charge

-

TBD

µC

Reverse

recovery current

-

TBD

A

Reverse

recovery time

(Figure 4: "Test circuit for inductive load

switching and diode recovery times")

-

TBD

ns

Reverse

recovery charge

-

TBD

µC

Reverse

recovery current

-

TBD

A

Notes:

(1)

Pulse width limited by safe operating area

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate source-Zener diode

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit.

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes have specifically been designed to enhance the

device's ESD capability. In this respect the Zener voltage is appropriate to achieve an

efficient and cost-effective intervention to protect the device's integrity. These integrated

Zener diodes thus avoid the usage of external components.