STL4LN80K5 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STL4LN80K5

4/14

DocID027815 Rev 1

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

800

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 800 V

µA

VGS = 0 V, VDS = 800 V

TC = 125 °C

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 1.2 A

2.1

2.6

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

110

Coss

Output capacitance

9.5

Crss

Reverse transfer

capacitance

0.4

Coss(eq)

(1)

Equivalent output

capacitance

VDS = 0 to 640 V, VGS = 0 V

TBD

Intrinsic gate

resistance

f = 1 MHz, ID = 0 A

Total gate charge

VDD = 640 V, ID = 2 A

VGS= 10 V,

see Figure 3: "Gate charge test

circuit"

Qgs

Gate-source charge

TBD

Qgd

Gate-drain charge

TBD

Notes:

(1)

Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD= 400 V, ID = 1.6 A, RG = 4.7 Ω

VGS = 10 V

(See Figure 2: "Switching times test circuit

for resistive load"and Figure 7: "Switching

time waveform")

TBD

Rise time

TBD

td(off)

Turn-off

delay time

TBD

Fall time

TBD

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