STGW40H120DF2 datasheet(4/17 Pages) STMICROELECTRONICS

4 / 17 page

Electrical characteristics

STGW40H120DF2, STGWA40H120DF2

4/17

DocID023753 Rev 5

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

1200

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

2.1

2.6

VGE = 15 V, IC = 40 A,

TJ = 125 °C

2.4

VGE = 15 V, IC = 40 A,

TJ = 175 °C

2.5

Forward on-voltage

IF = 40 A

3.9

4.9

IF = 40 A, TJ = 125 °C

3.05

IF = 40 A, TJ = 175 °C

2.8

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 2 mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 1200 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz,

VGE = 0 V

3200

Coes

Output capacitance

220

Cres

Reverse transfer

capacitance

Total gate charge

VCC = 960 V, IC = 40 A,

VGE = 15 V (see Figure 30: "

Gate charge test circuit")

158

Qge

Gate-emitter charge

Qgc

Gate-collector charge

STGW40H120DF2 Datasheet(PDF) 4 Page - STMicroelectronics

STGW40H120DF2 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Datasheet Download

Link URL