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STGW40H120DF2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGW40H120DF2
Description  Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW40H120DF2 Datasheet(HTML) 5 Page - STMicroelectronics

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STGW40H120DF2, STGWA40H120DF2
Electrical characteristics
DocID023753 Rev 5
5/17
Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 40 A,
VGE = 15 V, RG = 10
Ω
(see Figure 31: " Switching
waveform")
18
-
ns
tr
Current rise time
37
-
ns
(di/dt)on
Turn-on current slope
1755
-
A/µs
td(off)
Turn-off-delay time
152
-
ns
tf
Current fall time
83
-
ns
Eon(1)
Turn-on switching energy
1
-
mJ
Eoff(2)
Turn-off switching energy
1.32
-
mJ
Ets
Total switching energy
2.32
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 40 A,
VGE = 15 V, RG = 10
Ω
TJ = 175 °C
(see Figure 31: " Switching
waveform" )
36
-
ns
tr
Current rise time
20
-
ns
(di/dt)on
Turn-on current slope
1580
-
A/µs
td(off)
Turn-off-delay time
161
-
ns
tf
Current fall time
190
-
ns
Eon(1)
Turn-on switching energy
1.81
-
mJ
Eoff(2)
Turn-off switching energy
2.46
-
mJ
Ets
Total switching energy
4.27
-
mJ
tsc
Short-circuit withstand time
VCC = 600 V, VGE = 15 V,
TJstart = 150 °C
5
-
µs
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 40 A, VR = 600 V,
VGE = 15 V
(see Figure 31: " Switching
waveform") di/dt = 500 A/µs
-
488
ns
Qrr
Reverse recovery charge
-
2.59
µC
Irrm
Reverse recovery current
-
11.6
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
406
A/µs
Err
Reverse recovery energy
-
0.38
mJ
trr
Reverse recovery time
IF = 40 A, VR = 600 V,
VGE = 15 V TJ = 175 °C
(see Figure 31: " Switching
waveform") di/dt = 500 A/µs
-
484
ns
Qrr
Reverse recovery charge
-
4.5
µC
Irrm
Reverse recovery current
-
18.6
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
170
A/µs
Err
Reverse recovery energy
-
0.94
mJ



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