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STL12N65M5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL12N65M5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() This is information on a product in full production. July 2013 DocID17450 Rev 4 1/17 17 STL12N65M5 N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Figure 1. Internal schematic diagram Features • Outstanding R DS(on) *area • Extremely large avalanche performance • Gate charge minimized • Very low intrinsic capacitance • 100% avalanche tested Applications • Switching applications Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. PowerFLAT 5x6 HV 1 2 3 4 TM Order code VDSS RDS(on) max ID STL12N65M5 710 V 0.530 Ω 8.5 A Table 1. Device summary Order code Marking Package Packaging STL12N65M5 12N65M5 PowerFLAT ™ HV Tape and reel www.st.com |
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