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STL12N65M5 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL12N65M5
Description  Very low intrinsic capacitance
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL12N65M5 Datasheet(HTML) 5 Page - STMicroelectronics

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STL12N65M5
Electrical characteristics
Table 7. Source drain diode
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
t
d (v)
Voltage delay time
V
DD
= 400 V, I
D
= 6 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see
Figure 17),
(see
Figure 20)
-23
-
ns
t
r(v)
Voltage rise time
-
10
-
ns
t
f(i)
Current fall time
-
13.5
-
ns
t
c(off)
Crossing time
-
13
-
ns
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
(1)
Source-drain current
-
8.5
A
I
SDM
(1),(2)
1.
Limited by maximum junction temperature
2.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
34
A
V
SD
(3)
3.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 8.5 A, V
GS
= 0
-
1.5
V
t
rr
Reverse recovery time
I
SD
= 8.5 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 17)
-232
ns
Q
rr
Reverse recovery charge
-
2
μC
I
RRM
Reverse recovery current
-
17.5
A
t
rr
Reverse recovery time
I
SD
= 8.5 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 17)
-328
ns
Q
rr
Reverse recovery charge
-
2.8
μC
I
RRM
Reverse recovery current
-
17
A



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