STL100N10F7 datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STL100N10F7

Description	N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

STL100N10F7

4/16

DocID023656 Rev 4

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

100

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 100 V

VDS = 100 V; TC=125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = +20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 19 A

0.0062 0.0073

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =50 V, f=1 MHz,

VGS=0

4369

5680

Coss

Output capacitance

823

1070

Crss

Reverse transfer

capacitance

-36

Total gate charge

VDD=50 V, ID = 19 A

VGS =10 V

Figure 14

-61

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD=50 V, ID= 19 A,

RG=4.7 Ω, VGS= 10 V

Figure 13

-27

Rise time

td(off)

Turn-off delay time

Fall time

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