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STP140N8F7 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP140N8F7 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STP140N8F7 Electrical characteristics DocID026822 Rev 2 5/13 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 90 A ISDM(1) Source-drain current (pulsed) - 360 A VSD (2) Forward on voltage VGS = 0, ISD = 90 A - 1.2 V trr Reverse recovery time ISD = 64 A, di/dt = 100 A/µs, VDD = 60 V Tj = 150 °C - 58 ns Qrr Reverse recovery charge - 92 nC IRRM Reverse recovery current - 3.2 A Notes: (1)Pulse width is limited by safe operating area (2)Pulse test: pulse duration = 300 µs, duty cycle 1.5% |
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