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STW40N95K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW40N95K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  November 2014 DocID026447 Rev 2 1/13 This is information on a product in full production. www.st.com STW40N95K5 N- channel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID PTOT STW40N95K5 950 V 0.130 Ω 38 A 450 W Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packaging STW40N95K5 40N95K5 TO-247 Tube 1 2 3 TO-247 |
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