STW40N95K5

Electrical characteristics

DocID026447 Rev 2

5/13

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Source-drain current

-

38

A

Source-drain current

(pulsed)

-

152

A

Forward on voltage

-

1.5

V

Reverse recovery

time

(see Figure 18: " Unclamped

inductive load test circuit")

-

706

ns

Reverse recovery

charge

-

22

µC

Reverse recovery

current

-

62

A

Reverse recovery

time

(see Figure 18: " Unclamped

inductive load test circuit")

-

886

ns

Reverse recovery

charge

-

28.2

µC

Reverse recovery

current

-

64

A

Notes:

Table 8: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes have specifically been designed to enhance the

device's ESD capability. In this respect the Zener voltage is appropriate to achieve an

efficient and cost-effective intervention to protect the device's integrity. These integrated

Zener diodes thus avoid the usage of external components.