STW40N95K5 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STW40N95K5

4/13

DocID026447 Rev 2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0, ID = 1 mA

950

IDSS

Zero gate voltage drain

current

VGS = 0, VDS = 950 V

µA

VGS = 0, VDS = 950 V,

TC=125 °C

µA

IGSS

Gate-body leakage current

VDS=0, VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 19 A

0.110

0.130

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS=0, VDS =100 V, f=1 MHz

3300

Coss

Output capacitance

250

Crss

Reverse transfer

capacitance

Co(tr)(1)

Equivalent capacitance time

VGS = 0, VDS = 0 to 760 V

398

Co(er)(2)

Equivalent capacitance

energy related

142

Intrinsic gate resistance

f = 1 MHz, ID=0

Total gate charge

VDD = 760 V, ID = 38 A

VGS =10 V

(see Figure 16: "Gate charge

test circuit")

Qgs

Gate-source charge

18.7

Qgd

Gate-drain charge

63.4

Notes:

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

(2)energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS

increases from 0 to 80% VDSS

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay

time

VDD = 475 V, ID = 19 A,

= 4.7 Ω, VGS = 10 V

(see Figure 15: "Switching times test

circuit for resistive load")

33.5

Rise time

td(off)

Turn-off-delay

time

91.5

Fall time

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