STM32L496QGI3STR datasheet(140/263 Pages) STMICROELECTRONICS

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Table 48. Current consumption in Shutdown mode

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(Shutdown)

Supply current

in Shutdown

mode

(backup

registers

retained) RTC

disabled

1.8 V

161

983

3020

8970

556

3314

10498 31391

2.4 V

193

1150

3530

10300

111

648

3844

11897 35017

3 V

242

1400

4260

12500

154

780

4447

13473 39297

3.6 V

338

1790

5220

14700

236

1009

5354

15679 44571

IDD_ALL

(Shutdown

with RTC)

Supply current

in Shutdown

mode

(backup

registers

retained) RTC

enabled

RTC clocked by LSE

bypassed at 32768 Hz

1.8 V

225

363

1190

3230

9180

2.4 V

314

478

1440

3820

10700

3 V

421

621

1790

4660

12900

3.6 V

561

831

2280

5730

15300

RTC clocked by LSE

quartz (2) in low drive

mode

1.8 V

341

472

1303

3459

2.4 V

435

586

1572

4041

3 V

553

732

1982

5145

3.6 V

716

948

2520

6325

IDD_ALL

(wakeup from

Shutdown)

Supply current

during wakeup

from Shutdown

mode

Wakeup clock is

MSI = 4 MHz.

See (3).

3 V

0.6

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 51: Low-power mode wakeup timings.

STM32L496QGI3STR Datasheet(PDF) 140 Page - STMicroelectronics

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