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ESDAVLC8-4BN4 Datasheet(PDF) 3 Page - STMicroelectronics |
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ESDAVLC8-4BN4 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() DocID022192 Rev 3 3/10 ESDAVLC8-4BN4 Characteristics Figure 3. Peak pulse power versus initial junction temperature (8/20 µs waveform) Figure 4. Peak pulse power versus exponential pulse duration Ppp (W) 0 20 40 60 80 100 25 35 45 55 65 75 85 95 105 115 125 135 145 8/20 µs Direct Reverse T (°C) j P (W) PP 1 10 100 10 100 1000 Tj=25 °C Direct Reverse t (µs) p Figure 5. Clamping voltage versus peak pulse current (typical values, 8/20 µs waveform) Figure 6. Junction capacitance versus reverse voltage applied (typical values) I (A) PP 0.1 1.0 10.0 10 20 30 8/20µs Tj initial = 25 °C Direct Reverse V (V) CL C(pF) 0.0 1.0 2.0 3.0 4.0 5.0 01 2 3 4 5 6 F=1 MHz Vosc=30mVRMS Vr=0V Tj=25 °C Direct Reverse VR(V) Figure 7. ESD response to IEC 61000-4-2 (+8 kV contact discharge) on each channel Figure 8. ESD response to IEC 61000-4-2 (-8 kV contact discharge) on each channel 10 V/div 20 ns/div 10 V/div 20 ns/div |
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