ECT25S40 datasheet(13/46 Pages) E-CMOS

13 / 46 page

E-CMOS Corp. (www.ecmos.com.tw)

Page 13 of 46

4L08N-Rev.F001

ECT25S40

4M BIT SPI NOR FLASH

Instructions Description

All instructions, addresses and data are shifted in and out of the device, beginning with the most

significant bit on the first rising edge of SCLK after /CS is driven low. Then, the one byte instruction

code must be shifted in to the device, most significant bit first on SI, each bit being latched on the

rising edges of SCLK.

See Table 9, every instruction sequence starts with a one-byte instruction code. Depending on the

instruction, this might be followed by address bytes, or by data bytes, or by both or none. /CS must

be driven high after the last bit of the instruction sequence has been shifted in. For the instruction

of Read, Fast Read, Read Status Register or Release from Deep Power Down, and Read Device

ID, the shifted-in instruction sequence is followed by a data out sequence. /CS can be driven high

after any bit of the data-out sequence is being shifted out.

For the instruction of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register,

Write Enable, Write Disable or Deep Power-Down instruction, /CS must be driven high exactly at a

byte boundary, otherwise the instruction is rejected, and is not executed. That is /CS must driven

high when the number of clock pulses after /CS being driven low is an exact multiple of eight. For

Page Program, if at any time the input byte is not a full byte, nothing will happen and WEL will not

be reset.

ECT25S40 Datasheet(PDF) 13 Page - E-CMOS Corporation