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ECT25S40 Datasheet(PDF) 40 Page - E-CMOS Corporation

Part # ECT25S40
Description  4M BIT SPI NOR FLASH
PDF  46 Pages
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

ECT25S40 Datasheet(HTML) 40 Page - E-CMOS Corporation

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E-CMOS Corp. (www.ecmos.com.tw)
Page 40 of 46
4L08N-Rev.F001
ECT25S40
4M BIT SPI NOR FLASH
Note:
1. Tested with clock frequency lower than 50 MHz.
2. tW can be up to 45 ms at -40℃ during the characterization of the current design. It will be
improved in the future design.
Symbol
Parameter
Min.
Typ.
Max.
Unit.
tSHSL
/CS High Time（read/write）
20
ns
tSHQZ
Output Disable Time
6
ns
tCLQX
Output Hold Time
0
ns
tDVCH
Data In Setup Time
2
ns
tCHDX
Data In Hold Time
2
ns
tHLCH
/Hold Low Setup Time (relative to Clock)
5
ns
tHHCH
/Hold High Setup Time (relative to Clock)
5
ns
tCHHL
/Hold High Hold Time (relative to Clock)
5
ns
tCHHH
/Hold Low Hold Time (relative to Clock)
5
ns
tHLQZ
/Hold Low To High-Z Output
6
ns
tHHQX
/Hold Low To Low-Z Output
6
ns
tCLQV
Clock Low To Output Valid
7
ns
tWHSL
Write Protect Setup Time Before /CS Low
20
ns
tSHWL
Write Protect Hold Time After /CS High
100
ns
tDP
/CS High To Deep Power-Down Mode
0.1
µs
tRES1
/CS High To Standby Mode Without Electr
onic
Signature Read
3
µs
tRES2
/CS High To Standby Mode With Ele
ctronic
Signature Read
1.5
µs
tSUS
/CS High To Next Instruction After Suspend
2
us
tW
Write Status Register Cycle Time
10
15(2)
ms
tPP
Page Programming Time
0.7
2.4
ms
tSE
Sector Erase Time
60
300
ms
tBE
Block Erase Time(32K Bytes/64K Bytes)
0.3/0.5 0.75/1.5
s
tCE
Chip Erase Time
4
10
s



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