APM4220 datasheet(2/9 Pages) ANPEC

2 / 9 page

 ANPEC Electronics Corp.

Rev. A.1 - Aug., 2002

APM4220

www.anpec.com.tw

Symbol

Parameter

Rating

Unit

TA=25

°C

2.5

Maximum Power Dissipation

TA=100

°C

1.0

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to 150

°C

RθJA

Thermal Resistance – Junction to Ambient

°C/W

APM4220

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

IDSS

Zero Gate Voltage Drain Current

VDS=20V , VGS=0V

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

1.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

VGS=10V, IDS=14A

7.5

RDS(ON)

Drain-Source On-state Resistance

VGS=4.5V,IDS=8A

Ω

VSD

Diode Forward Voltage

IS=16A, VGS=0V

0.7

1.2

Dynamic

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=15V, IDS=14A

VGS=4.5V,

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=15V, IDS=1A,

VGEN=10V,RG=6

Ω,

Ciss

Input Capacitance

1785

Coss

Output Capacitance

605

Crss

Reverse Transfer Capacitance

VGS=0V

VDS=15V

Frequency=1.0MHz

490

Notes

a : Guaranteed by design, not subject to production testing

b : Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Absolute Maximum Ratings (Cont.) (T

A = 25°C unless otherwise noted)

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