FSB50550B datasheet(6/13 Pages) ONSEMI

6 / 13 page

Semiconductor Components Industries, LLC, 2017

www.fairchildsemi.com

FSB50550B / FSB50550BS . Rev. 1.2

www.onsemi.com

Recommended Operating Condition

Figure 3. Built-In Bootstrap Diode Characteristics (Typical)

Notes:

4. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less than this

value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case.

5. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field

applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.

6. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test

circuit that is same as the switching test circuit.

7. Vts is only for sensing-temperature of module and cannot shutdown MOSFETs automatically.

8. Built-in bootstrap diode includes around 15 Ωresistance characteristic. Please refer to Figure 2.

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

VPN

Supply Voltage

Applied between P and N

300

400

VDD

Control Supply Voltage

Applied between VDD and COM

13.5

15.0

16.5

VBS

High-Side Bias Voltage

Applied between VB and VS

13.5

15.0

16.5

VIN(ON)

Input ON Threshold Voltage

Applied between VIN and COM

3.0

VDD

VIN(OFF) Input OFF Threshold Voltage

0.6

tdead

Blanking Time for Preventing

Arm-Short

VDD = VBS = 13.5 ~ 16.5 V, TJ ≤ 150°C

1.0

μs

fPWM

PWM Switching Frequency

TJ ≤ 150°C

kHz

456

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Built-In Bootstrap Diode V

F-IF Characteristic

F [V]

TC = 25°C

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