FSB50550B datasheet(9/13 Pages) ONSEMI

9 / 13 page

Semiconductor Components Industries, LLC, 2017

www.fairchildsemi.com

FSB50550B / FSB50550BS . Rev. 1.2

www.onsemi.com

Figure 11. Example of Application Circuit

Notes:

13. About pin position, refer to Figure 1.

14. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM® 5 product and MCU are useful to prevent improper input signal caused by surge-noise.

15. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-

side MOSFET. For this reason, the voltage-drop across R3 should be less than 1 V in the steady-state.

16. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC.

17. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current.

COM

VDD

LIN

HIN

COM

VDD

LIN

HIN

COM

VDD

LIN

HIN

(1 ) COM

(2 ) VB(U)

(3 ) VDD(U)

(4 ) IN(UH)

(5 ) IN(UL)

(6 ) N.C

(7 ) VB(V)

(8 ) VDD(V)

(9 ) IN(VH)

(10) IN(VL)

(11) VTS

(12) VB(W)

(13) VDD(W)

(14) IN(WH)

(15) IN(WL)

(16) N.C

(17) P

(18) U , VS(U)

(19) NU

(22) NW

15 V

Supply

VDC

For current-sensing and protection

VTS

(21) V , VS(V)

(20) NV

(23) W, VS(W)

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