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NT5CB128M8GP-EKB Datasheet(PDF) 61 Page - Nanya Technology Corporation. |
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NT5CB128M8GP-EKB Datasheet(HTML) 61 Page - Nanya Technology Corporation. |
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61 / 160 page ![]() Version 2.2 61 Nanya Technology Cooperation © 04/2019 All Rights Reserved. NTC Proprietary Level: Property DDR3(L) 1Gb SDRAM NT5CB(C)128M8GN / NT5CB(C)64M16GP Refresh Command The Refresh command (REF) is used during normal operation of the DDR3(L) SDRAMs. This command is not persistent, so it must be issued each time a refresh is required. The DDR3(L) SDRAM requires Refresh cycles at an average periodic interval of tREFI. When , RA, and A are held Low and WE High at the rising edge of the clock, the chip enters a Refresh cycle. All banks of the SDRAM must be precharged and idle for a minimum of the precharge time tRP(min) before the Refresh Command can be applied. The refresh addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care” during a Refresh command. An internal address counter suppliers the address during the refresh cycle. No control of the external address bus is required once this cycle has started. When the refresh cycle has completed, all banks of the SDRAM will be in the precharged (idle) state. A delay between the Refresh Command and the next valid command, except NOP or DES, must be greater than or equal to the minimum Refresh cycle time tRFC(min) as shown in the following figure. In general, a Refresh command needs to be issued to the DDR3(L) SDRAM regularly every tREFI interval. To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of 8 Refresh commands can be postponed during operation of the DDR3(L) SDRAM, meaning that at no point in time more than a total of 8 Refresh commands are allowed to be postponed. In case that 8 Refresh commands are postponed in a row, the resulting maximum interval between the surrounding Refresh commands is limited to 9 x tREFI. A maximum of 8 additional Refresh commands can be issued in advance (“pulled in”), with each one reducing the number of regular Refresh commands required later by one. Note that pulling in more than 8 Refresh commands in advance does not further reduce the number of regular Refresh commands required later, so that the resulting maximum interval between two surrounding Refresh command is limited to 9 x tREFI. Before entering Self-Refresh Mode, all postponed Refresh commands must be executed. Self-Refresh Entry/Exit Timing Postponing Refresh Commands (Example) CK CK T0 T1 Ta0 Tb0 Tb1 Tb3 Ta1 Tb2 NOP CMD NOP REF Valid NOP REF NOP Valid Valid Valid Valid REF Tc0 Tc1 Valid tRFC tRFC(min) tREFI (max, 9 x tREFI) DRAM must be idle DRAM must be idle Time Break 9 x tREFI tREFI tRFC 8 REF-Command postponed t |
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