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NT5CB128M8GP-EKB Datasheet(PDF) 113 Page - Nanya Technology Corporation. |
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NT5CB128M8GP-EKB Datasheet(HTML) 113 Page - Nanya Technology Corporation. |
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113 / 160 page ![]() Version 2.2 113 Nanya Technology Cooperation © 04/2019 All Rights Reserved. NTC Proprietary Level: Property DDR3(L) 1Gb SDRAM NT5CB(C)128M8GN / NT5CB(C)64M16GP On-Die Termination (ODT) Levels and I-V Characteristics On-Die Termination effective resistance RTT is defined by bits A9, A6, and A2 of the MR1 Register. ODT is applied to the DQ, DM, DQS/ , and TDQS/T (x8 devices only) pins. A functional representation of the on-die termination is shown in the following figure. The individual pull-up and pull-down resistors (RTTPu and RTTPd) are defined as follows: under the condition that RTTPd is turned off (3) under the condition that RTTPu is turned off (4) On-Die Termination: Definition of Voltages and Currents | IOut | VDDQ – VOut RTTPu = | IOut | VOut RTTPd = |
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