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GPBA01B Datasheet(PDF) 16 Page - Generalplus Technology Inc.

Part # GPBA01B
Description  Bus Extender
PDF  29 Pages
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Manufacturer  GENERALPLUS [Generalplus Technology Inc.]
Direct Link  http://www.generalplus.com
Logo GENERALPLUS - Generalplus Technology Inc.

GPBA01B Datasheet(HTML) 16 Page - Generalplus Technology Inc.

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GPBA01B
© Generalplus Technology Inc.
Proprietary & Confidential
16
MAY 28, 2007
Version: 1.1
10.3. AC Characteristics (VDD = 2.4V - 5.5V, TA = 0℃ to 70℃)
Test Condition VIH = VDD, VIL = 0V, Input Rise and Fall Times = 1ns, I/O Timing Reference Level = VDD/2, Output Load: CLOAD = 100pF
Limits
Characteristics
Symbols
Min.
Typ.
Max.
Units
Test conditions
AH Setup Time
Tahs
10
-
-
ns
-
AH Hold Time
Tahh
10
-
-
ns
-
AL Setup Time
Tals
10
-
-
ns
-
10
-
25
ns
VDD = 2.4V
10
-
15
ns
VDD = 3.6V
AL Hold Time
1
Talh
10
-
10
ns
VDD = 5.5V
Data Setup Time
Tds
10
-
-
ns
-
Data Hold Time
2
Tdh
10
-
-
ns
-
-
-
15
ns
VDD = 2.4V
-
-
9
ns
VDD = 3.6V
MC1 Falling to MC0 Rising
Tm1m0
-
-
4
ns
VDD = 5.5V
-
31
49
ns
VDD = 2.4V
-
21
30
ns
VDD = 3.6V
Address High Delay
Tahd
-
16
22
ns
VDD = 5.5V
-
32
58
ns
VDD = 2.4V @ ah hold time = 10n
-
20
31
ns
VDD = 3.6V @ ah hold time = 10n
Address Low Delay
3
Tald
-
17
23
ns
VDD = 5.5V @ ah hold time = 10n
-
46
69
ns
VDD = 2.4V
-
28
40
ns
VDD = 3.6V
MC1 Rising to Chip-enable
Falling
Tcezf
-
22
30
ns
VDD = 5.5V
-
29
46
ns
VDD = 2.4V
-
19
28
ns
VDD = 3.6V
MC1 Rising to Chip-enable
Rising
Tcezr
-
14
20
ns
VDD = 5.5V
-
36
52
ns
VDD = 2.4V
-
23
34
ns
VDD = 3.6V
MC1 Falling to
Write-enable Falling
Twrzf
-
18
23
ns
VDD = 5.5V
-
19
25
ns
VDD = 2.4V
-
13
20
ns
VDD = 3.6V
MC1 Falling to
Write-enable Rising
Twrzr
-
10
15
ns
VDD = 5.5V
-
37
54
ns
VDD = 2.4V
-
24
35
ns
VDD = 3.6V
MC1 Falling to
Read-enable Falling
Trdzf
-
18
25
ns
VDD = 5.5V
-
24
39
ns
VDD = 2.3V
-
16
24
ns
VDD = 3.6V
MC1 Rising to
Read-enable Rising
Trdzr
-
12
17
ns
VDD = 5.5V
-
54
90
ns
VDD = 2.3V
-
34
54
ns
VDD = 3.6V
Read Port Data Delay Time
Tdd
-
25
37
ns
VDD = 5.5V
Note1: Talh Max value prevent bus fighting.
Note2: When write memory cycle, please refer to accompany memory.
Note3: Measure from al_in to al_out.



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