Nexperia

PBHV2160Z

600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

PBHV2160Z

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Product data sheet

24 June 2015

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8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

600

V

collector-emitter voltage

open base

-

600

V

collector-emitter peak voltage

-

600

V

emitter-base voltage

open collector

-

6

V

collector current

-

0.1

A

[1]

-

0.65

W

total power dissipation

[2]

-

1.4

W

junction temperature

-

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

aaa-013425

-60

180

100

20

0.8

0.4

1.2

1.6

(W)

0

(1)

(2)

(2) FR4 PCB, standard footprint

Fig. 1. Power derating curves