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PBHV2160Z Datasheet(PDF) 7 Page - Nexperia B.V. All rights reserved

Part # PBHV2160Z
Description  600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
PDF  13 Pages
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Manufacturer  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PBHV2160Z Datasheet(HTML) 7 Page - Nexperia B.V. All rights reserved

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© Nexperia B.V. 2017. All rights reserved
Nexperia
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV2160Z
All information provided in this document is subject to legal disclaimers.
Product data sheet
24 June 2015
7 / 13
aaa-013588
IC (mA)
10-1
103
102
1
10
10-1
1
VCEsat
(V)
10-2
(1)
(2)
(3)
Tamb = 25 °C
(1) IC/IB = 10
(2) IC/IB = 5
(3) IC/IB = 2.5
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-013589
IC (mA)
10-1
103
102
1
10
1
10
102
103
RCEsat
(Ω)
10-1
(1)
(2)
(3)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-013590
IC (mA)
10-1
103
102
1
10
1
10
102
103
RCEsat
(Ω)
10-1
(1)
(2)
(3)
Tamb = 25 °C
(1) IC/IB = 10
(2) IC/IB = 5
(3) IC/IB = 2.5
Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values



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