PBHV2160Z datasheet(6/13 Pages) NEXPERIA

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Nexperia

PBHV2160Z

600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

PBHV2160Z

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Product data sheet

24 June 2015

6 / 13

aaa-013584

VCE (V)

0.04

0.06

0.02

0.08

0.10

(A)

IB = 8 mA

7.2

6.4

5.6

4.8

3.2

2.4

1.6

0.8

Tamb = 25 °C

Fig. 6. Collector current as a function of collector-

emitter voltage; typical values

aaa-013585

0.4

0.8

1.2

VBE

(V)

IC (mA)

10-1

103

102

(1)

(2)

(3)

VCE = 10 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 7. Base-emitter voltage as a function of collector

current; typical values

aaa-013586

0.6

0.8

0.4

1.0

1.2

VBEsat

(V)

0.2

IC (mA)

10-1

103

102

(1)

(2)

(3)

IC/IB = 5

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb= 100 °C

Fig. 8. Base-emitter saturation voltage as a function of

collector current; typical values

aaa-013587

IC (mA)

10-1

103

102

10-1

VCEsat

(V)

10-2

(1)

(2)

(3)

IC/IB = 5

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 9. Collector-emitter saturation voltage as a

function of collector current; typical values

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