2ED2182S06F datasheet(9/25 Pages) INFINEON

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Datasheet

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2020-07-07

2ED2182 (4) S06F (J)

650 V half-bridge gate driver with integrated bootstrap diode

Application information and additional details

5.1

IGBT / MOSFET gate drive

The 2ED2182 (4) S06F (J) HVIC is designed to drive MOSFET or IGBT power devices. Figures 4 and 5 illustrate

several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used

to drive the gate of the power switch, is defined as IO. The voltage that drives the gate of the external power switch

is defined as VHO for the high-side power switch and VLO for the low-side power switch; this parameter is

sometimes generically called VOUT and in this case does not differentiate between the high-side or low-side output

voltage.

Figure 4

HVIC Sourcing current

Figure 5

HVIC Sinking current

5.2

Switching and timing relationships

The relationships between the input and output signals of the 2ED2182 (4) S06F (J) are illustrated below in

Figure 6 and Figure 7. From these figures, we can see the definitions of several timing parameters (i.e. tON, tOFF,

tR, and tF) associated with this device.

Figure 6

Switching timing diagram

Figure 7

Input/output logic diagram

2ED2182S06F Datasheet(PDF) 9 Page - Infineon Technologies AG