2ED2182S06F datasheet(16/25 Pages) INFINEON

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V 2.21

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2020-07-07

2ED2182 (4) S06F (J)

650 V half-bridge gate driver with integrated bootstrap diode

Figure 19 A) Q1 conducting B) D2 conducting

C) D3 conducting

D) Q4 conducting

The circuit shown in Figure 20-A depicts one leg of the three phase inverter; Figures 20-B and 20-C show a

simplified illustration of the commutation of the current between Q1 and D2. The parasitic inductances in the

power circuit from the die bonding to the PCB tracks are lumped together in LC and LE for each IGBT. When the

high-side switch is on, VS1 is below the DC+ voltage by the voltage drops associated with the power switch and

the parasitic elements of the circuit. When the high-side power switch turns off, the load current momentarily

flows in the low-side freewheeling diode due to the inductive load connected to VS1 (the load is not shown in

these figures). This current flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load

and a negative voltage between VS1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential

than the VS pin).

Figure 20 Figure A shows the Parasitic Elements. Figure B shows the generation of VS positive. Figure C shows the

generation of VS negative

5.10

NTSOA – Negative Transient Safe Operating Area

In a typical motor drive system, dV/dt is typically designed to be in the range of 3 – 5 V / ns. The negative VS

transient voltage can exceed this range during some events such as short circuit and over-current shutdown,

when di/dt is greater than in normal operation.

Infineon’s HVICs have been designed for the robustness required in many of today’s demanding applications. An

indication of the 2ED2182’s robustness can be seen in Figure 21, where the 2ED2182’s Safe Operating Area is

shown at VBS=15 V based on repetitive negative VS spikes. A negative VS transient voltage falling in the grey area

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