QM3003J datasheet(4/8 Pages) UPI

4 / 8 page

QM3003J

QM3003J-DS-F0000, Aug. 2019

www.upi-semi.com

P-Channel Electrical Characteristics

P-Channel Electrical Characteristics: (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-30

△

BVDSS /△TJ

BVDSS Temperature Coefficient

Reference to 25°C , ID=-1mA

-0.022

V/°C

RDS(ON)

Static Drain-Source

On-Resistance2

VGS=-10V , ID=-5A

mΩ

VGS=-4.5V , ID=-4A

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

-1.5

-2.5

△

VGS(th)

VGS(th) Temperature Coefficient

4.6

mV/°C

IDSS

Drain-Source Leakage Current

VDS=-24V , VGS=0V , TJ=25°C

-1

VDS=-24V , VGS=0V , TJ=55°C

-5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

100

gfs

Forward Transconductance

VDS=-5V , ID=-6A

Gate Resistance

VDS=0V , VGS=0V , f=1MHz



Total Gate Charge

VDS=-15V , VGS=-4.5V , ID=-5A

12.6

17.6

Qgs

Gate-Source Charge

4.8

6.7

Qgd

Gate-Drain Charge

4.8

6.7

td(on)

Turn-On Delay Time

VDS=-15V , VGS=-10V ,

RG=3.3

, ID=-5A

4.6

9.2

Rise Time

14.8

26.6

td(off)

Turn-Off Delay Time

Fall Time

19.6

39.2

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

1345

1883

Coss

Output Capacitance

194

272

Crss

Reverse Transfer Capacitance

158

221

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