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QM3003J Datasheet(PDF) 5 Page - uPI Group Inc. |
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QM3003J Datasheet(HTML) 5 Page - uPI Group Inc. |
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5 / 8 page ![]() QM3003J QM3003J-DS-F0000, Aug. 2019 Copyright© uPI Semiconductor Corp. All Rights reserved. www.upi-semi.com 4 Diode Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V, Force Current -- -- -5.8 A ISM Pulsed Source Current2,4 -- -- -24 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25°C -- -- -1.2 V trr Reverse Recovery Time IF=-5A , di/dt=100A/µs , TJ=25°C -- 16.3 -- nS Qrr Reverse Recovery Charge -- 5.9 -- nC Note: 1. Test data conducted with surface mount attachment to 1 inch2, FR‐4 board utilizing 2oz copper 2. Pulse Test. Pulse width ≦ 300uS, duty cycle ≦ 2% 3. The power dissipation is limited by a 150°C maximum junction temperature 4. The data is theoretically the same as ID and IDM. In real applications, it will be limited by total power |
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