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COP8CFE9 Datasheet(PDF) 10 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # COP8CFE9
Description  8-Bit CMOS Flash Microcontroller with 8k Memory, Virtual EEPROM, and 10-Bit A/D
PDF  63 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

COP8CFE9 Datasheet(HTML) 10 Page - National Semiconductor (TI)

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DC Electrical Characteristics (−40˚C
≤ T
A ≤ +125˚C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Operating Voltage
4.5
5.5
V
Power Supply Rise Time
10
50 x 10
6
ns
Power Supply Ripple (Note 2)
Peak-to-Peak
0.1 V
CC
V
Supply Current (Note 3)
CKI = 10 MHz
V
CC = 5.5V, tC = 0.5 µs
12.4
mA
CKI = 3.33 MHz
V
CC = 4.5V, tC = 1.5 µs
5.5
mA
HALT Current with BOR Disabled (Note 4)
V
CC = 5.5V, CKI=0MHz
<440
µA
Idle Current (Note 3)
CKI = 10 MHz
V
CC = 5.5V, tC = 0.5 µs
1.9
mA
Supply Current When Programming In ISP
V
CC = 5.0V, tC = 0.5 µs
26
mA
Input Levels (V
IH,VIL)
Logic High
0.8 V
CC
V
Logic Low
0.16 V
CC
V
Internal Bias Resistor for the CKI Crystal/Resonator
Oscillator
0.3
1.0
2.5
M
Ω
Hi-Z Input Leakage
V
CC = 5.5V
−3
+3
µA
Input Pullup Current
V
CC = 5.5V, VIN = 0V
−40
−250
µA
Port Input Hysteresis
0.25 V
CC
V
Output Current Levels
B0-B3 Outputs
Source (Weak Pull-Up Mode)
V
CC = 4.5V, VOH = 3.8V
−9
µA
Source (Push-Pull Mode)
V
CC = 4.5V, VOH = 4.2V
−9
mA
Sink (Push-Pull Mode) (Note 7)
V
CC = 4.5V, VOL = 0.3V
9
mA
Allowable Sink and Source Current per Pin
15
mA
All Others
Source (Weak Pull-Up Mode)
V
CC = 4.5V, VOH = 3.8V
−9
µA
Source (Push-Pull Mode)
V
CC = 4.5V, VOH = 3.8V
−6.3
mA
Sink (Push-Pull Mode) (Note 7)
V
CC = 4.5V, VOL = 1.0V
9
mA
Allowable Sink and Source Current per Pin
12
mA
TRI-STATE Leakage
V
CC = 5.5V
−3
+3
µA
Maximum Input Current without Latchup (Note 5)
±200
mA
RAM Retention Voltage, V
R (in HALT Mode)
2.0
V
Input Capacitance
7pF
Voltage on G6 to Force Execution from Boot
ROM(Note 8)
G6 rise time must be slower
than 100 ns
2xV
CC
V
CC +7
V
G6 Rise Time to Force Execution from Boot ROM
100
nS
Input Current on G6 when Input > V
CC
V
IN =11V,VCC = 5.5V
500
µA
AC Electrical Characteristics (−40˚C
≤ T
A ≤ +125˚C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Instruction Cycle Time (t
C)
Crystal/Resonator
4.5V
≤ V
CC ≤ 5.5V
0.5
DC
µs
Output Propagation Delay
R
L =2.2k, CL = 100 pF
Frequency of MICROWIRE/PLUS in Slave
Mode
2
MHz
MICROWIRE/PLUS Setup Time (t
UWS)20
ns
MICROWIRE/PLUS Hold Time (t
UWH)20
ns
www.national.com
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