PIMXRT516SCVM5A datasheet(25/124 Pages) NXP

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Electrical characteristics

i.MX RT1160 Crossover Processors Data Sheet for Industrial Products, Rev. 0, 04/2021

NXP Semiconductors

4.1.2

Thermal characteristics

Table 10 displays the 14 x 14 mm package thermal characteristics.

4.1.3

Operating ranges

Table 11 provides the operating ranges of the i.MX RT1160 processors. For details on the chip's power

structure, see the “Power Management Unit (PMU)” chapter of the i.MX RT1160 Reference Manual

(IMXRT1160RM).

VESD

Electrostatic discharge voltage, charged-device model

All pins except the corner pins

-500

+500

Corner pins only

-750

+750

ILAT

Immunity level

• Class II @105 oC ambient temperature

100

1 Determined according to JEDEC Standard JS001, Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model

(HBM).

2 Determined according to JEDEC Standard JS002, Field-Induced Charged-Device Model Test Method for

Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.

3 Determined according o JEDEC Standard JESD78, IC Latch-up Test.

Table 10. 14 x 14 mm thermal characteristics

Rating

Board Type1

1 Thermal test board meets JEDEC specification for this package (JESD51-9).

Symbol

Value

Unit

Junction to Ambient Thermal Resistance2

2 Determined in accordance to JEDEC JESD51-2A natural convection environment. Thermal resistance data in this report is

solely for a thermal performance comparison of one package to another in a standardized specified environment. It is not

meant to predict the performance of a package in an application-specific environment.

JESD51-9, 2s2p

RJA3

3 RJA = (Tj - Ta)/P [unit: oC/W], where Tj = junction temperature, Ta = ambient temperature, P = device power.

31.6

oC/W

Junction to Top of Package

Thermal Characterization Parameter2

JESD51-9, 2s2p

JT4

4 JT = (Tj - Tt)/P [unit: oC/W], where Tj = junction temperature, Tt = temperature at top of package, P = device power.

1.4

oC/W

Junction to Case Thermal Resistance5

5 Junction-to-Case thermal resistance determined using an isothermal cold plate. Case temperature is taken at the package top

side centre surface temperature.

JESD51-9, 1s

RJC6

6 RJC = (Tj - Tc)/P [unit: oC/W], where Tj = junction temperature, Tc = case temperature, P = device power.

oC/W

Table 9. Electrostatic discharge and latch-up characteristics (continued)

Symbol

Description

Min

Max

Unit

Notes

PIMXRT516SCVM5A Datasheet(PDF) 25 Page - NXP Semiconductors

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