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PIMXRT516SCVM5A Datasheet(PDF) 34 Page - NXP Semiconductors

Part # PIMXRT516SCVM5A
Description  i.MX RT1160 Crossover Processors Data Sheet for Industrial Products
PDF  124 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PIMXRT516SCVM5A Datasheet(HTML) 34 Page - NXP Semiconductors

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i.MX RT1160 Crossover Processors Data Sheet for Industrial Products, Rev. 0, 04/2021
34
NXP Semiconductors
Electrical characteristics
NOTE
The voltage on DCDC_PSWITCH pin should be below 0.5 V before
ramping up the voltage on DCDC_PSWITCH.
NOTE
The power rail VDD_SNVS_DIG is controlled by software.
NOTE
Need to ensure that there is no back voltage (leakage) from any supply on
the board towards the 3.3 V supply (for example, from the external
components that use both the 1.8 V and 3.3 V supplies).
NOTE
USB1_VBUS, USB2_VBUS, and VDDA_ADC_3P3 are not part of the
power supply sequence and may be powered at any time.
4.2.1.2
Power-down sequence
The following restrictions must be followed:
•
VDD_SNVS_IN supply must be turned off after any other power supply or be connected (shorted)
with VDD_LPSR_IN and DCDC_IN supply.
•
If a coin cell is used to power VDD_SNVS_IN, then ensure that it is removed after any other supply
is switched off.
4.2.1.3
Power supplies usage
I/O pins should not be externally driven while the I/O power supply for the pin (NVCC_XXXX) is OFF.
This can cause internal latch-up and malfunctions due to reverse current flows. For information about I/O
power supply of each pin, see “Power Rail” columns in pin list tables of Section 6, Package information
and contact assignments.”
4.2.2
Internal POR and power detect
Internal detector monitors VDD_SOC_IN and VDD_LPSR_DIG. Internal POR will be asserted whenever
VDD_SOC_IN or VDD_LPSR_DIG are lower than the valid voltage values shown in the Table 15.
Table 15. Internal POR and power detect
Symbol
Description
Value
Unit
Vdetlpsr1p0_H
1.0 V supply valid
0.75
V
Vdetsoc1p0_H
1.0 V supply valid
0.75
V
Hystdet1p0
The detector hysteresis
100
mV



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