QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

Datasheet Rev. K, May 2020

│ Subject to changewithout notice

- 6 of 26-

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Thermal and Reliability Information

Parameter

Conditions

Values

Units

85 °C Case backside Temperature

Pdiss = 518 W, Pulse: 100 us PW, 10% DC

0.10

°C/W

131

°C

Notes:

1.

Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates