QPD1025LEVB2 datasheet(3/27 Pages) QORVO

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QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

Datasheet Rev. K, May 2020

│ Subject to changewithout notice

- 3 of 26-

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Measured Load Pull Performance

– 50V Power Tuned 1, 2

Parameter

Typical Values

Units

Frequency, F

0.915

1.0

1.1

1.2

GHz

Output Power at 3dB compression, P3dB

58.9

58.6

58.5

58.6

dBm

Power Added Ef ficiency at 3dB compression, PAE3dB

66.8

60.1

66.1

62.6

Gain at 3dB compression, G3dB

17.6

16.8

Notes:

Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 750 mA (half device)

Pulsed, 100 us Pulse Width, 10% Duty Cycle.

Measured Load Pull Performance

– 50V Efficiency Tuned 1, 2

Parameter

Typical Values

Units

Frequency, F

0.915

1.0

1.1

1.2

GHz

Output Power at 3dB compression, P3dB

55.2

55.6

56.5

56.8

dBm

Power Added Ef ficiency at 3dB compression, PAE3dB

78.2

74.7

76.6

71.8

Gain at 3dB compression, G3dB

19.2

18.6

18.2

Notes:

Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 750 mA (half device)

Pulsed, 100 us Pulse Width, 10% Duty Cycle.

QPD1025LEVB2 Datasheet(PDF) 3 Page - Qorvo, Inc

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