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QPD1025LEVB2 Datasheet(PDF) 23 Page - Qorvo, Inc |
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QPD1025LEVB2 Datasheet(HTML) 23 Page - Qorvo, Inc |
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23 / 27 page ![]() QPD1025L 1800 W, 65 V, 0.96 – 1.215GHz, GaN RF Input-Matched Transistor Datasheet Rev. K, May 2020 │ Subject to changewithout notice - 23 of 26- www.qorvo.com 0.96 – 1.215 GHz Application Circuit EVB1 - Schematic Bias-up Procedure Bias-down Procedure 2. Set VG to -5 V. 3. Turn off RF signal. 4. Set ID current limit to 4 A. 4. Turn off VD 5. Apply 65 V VD. 5. Wait 2 seconds to allow drain capacitor to discharge. 6. Slowly adjust VG until ID is set to 1.5 A. 6. Turn off VG 7. Apply RF. |
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