AT45DB021E datasheet(6/74 Pages) DIALOG

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AT45DB021E

DS-AT45DB021E—8789J—03/2021

Description

The Adesto® AT45DB021E is a 1.65 V minimum, serial-interface, sequential access Flash memory. It is ideally

suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB021E

also supports the RapidS serial interface for applications requiring very high speed operation. Its 2,162,688 bits of

memory are organized as 1,024 pages of 256 bytes or 264 bytes each. In addition to the main memory,

AT45DB021E also contains one SRAM buffer of 256/264 bytes. The Buffer can be used as additional system

scratch memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three

step read-modify-write operation.

Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel

interface, the Adesto DataFlash® uses a serial interface to sequentially access its data. The simple sequential

access dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability,

minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and

industrial applications where high-density, low-pin count, low-voltage, and low-power are essential.

To allow for simple in-system re-programmability, AT45DB021E does not require high input voltages for

programming. The device operates from a single 1.65 V to 3.6 V power supply for the erase and program and read

operations. The AT45DB021E is enabled through the Chip Select pin (CS) and accessed via a three-wire interface

consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

All programming and erase cycles are self-timed.

AT45DB021E Datasheet(PDF) 6 Page - Dialog Semiconductor