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STM32WB55 Datasheet(PDF) 128 Page - STMicroelectronics |
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STM32WB55 Datasheet(HTML) 128 Page - STMicroelectronics |
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128 / 193 page ![]() Electrical characteristics STM32WB55xx STM32WB35xx 128/193 DS11929 Rev 11 Figure 26. HSI48 frequency vs. temperature Low-speed internal (LSI) RC oscillator NT jitter Next transition jitter Accumulated jitter on 28 cycles(4) -- ±0.15(2) - ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(4) -- ±0.25(2) - 1. VDD = 3 V, TA = –40 to 125 °C unless otherwise specified. 2. Guaranteed by design. 3. Guaranteed by characterization results. 4. Jitter measurement are performed without clock source activated in parallel. Table 61. HSI48 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit MSv40989V1 -6 -4 -2 0 2 4 6 -50 -30 -10 10 30 50 70 90 110 130 Avg min max °C % Table 62. LSI1 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI1 frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI1)(2) LSI1 oscillator start-up time - - 80 130 μs tSTAB(LSI1)(2) LSI1 oscillator stabilization time 5% of final frequency - 125 180 IDD(LSI1)(2) LSI1 oscillator power consumption - - 110 180 nA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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