STM32WB55 datasheet(131/193 Pages) STMICROELECTRONICS

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DS11929 Rev 11

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STM32WB55xx STM32WB35xx

Electrical characteristics

169

6.3.14

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:



Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.



FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operation to be resumed.

The test results are given in Table 67. They are based on the EMS levels and classes

defined in AN1709 “EMC design guide for STM8, STM32 and Legacy MCUs”, available on

www.st.com.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software.

Good EMC performance is highly dependent on the user application and the software in

particular. Therefore it is recommended that the user applies EMC software optimization

and prequalification tests in relation with the EMC level requested for the application.

Software recommendations

The software flow must include the management of runaway conditions such as:



corrupted program counter



unexpected reset



critical data corruption (e.g. control registers)

Table 67. EMS characteristics

Symbol

Parameter

Conditions

Level/Class

VFESD

Voltage limits to be applied on any I/O pin

to induce a functional disturbance

VDD = 3.3 V, TA = +25 °C, 

fHCLK = 64 MHz,

conforming to IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS

pins to induce a functional disturbance

VDD = 3.3 V, TA = +25 °C, 

fHCLK = 64 MHz,

conforming to IEC 61000-4-4

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