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SCY99080CDWR2G Datasheet(PDF) 5 Page - ON Semiconductor |
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SCY99080CDWR2G Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 27 page ![]() DDA002C http://onsemi.com 5 Maximum Ratings Symbol Rating Value Unit VHB Continuous voltage on the bridge pin, pin 17 −1 to 600 V Qmax Maximum injected charge into the HB pin (Note 3) 11 nC VBOOT−VHB Floating supply voltage, pin 17 and 19 −0.3 to 20 V VHgd High side output voltage, pin 18 VHB−0.3 to VBOOT+0.3 V VLgd Low side output voltage, pin 15 −0.3 to Vcc+0.3 V dVHB/dt Maximum slew rate on the HB pin, pin 17 ±50 V/ns Vcc Power Supply voltage, pin 16 −0.3 to 20 V pin voltage, all pins (except pin 3, 6, 15, 16, 17, 18, and 19) −0.3 to 10 V VDgs Synchronous clamp pin voltage, pin 3 −0.3 to 5 V VR_Fmax Maximum frequency adjust pin voltage, pin 6 −0.3 to 5 V RqJ−A Thermal Resistance Junction−to−Ambient, (Soldered on traces with total area of 50 mm2, 1 oz copper) Thermal Resistance Junction−to−Ambient, (Soldered on recommended layout, 1 oz copper) 137 117 °C/W Storage Temperature Range −60 to +150 °C TJmax Maximum Junction Temperature +150 °C ESD Capability, HBM model (Except all HV pins i.e., HB, Hgd and Boot) (Note 1) 2 kV ESD Capability, Machine Model 200 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per JEDEC (22A114C − Human Body Model and 22A115A Machine Model) 2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78. 3. The maximum injected charge corresponds to the injected current integrated over time into the half−bridge pin. Please refer to Figure 60 and related notes. |
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