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F6922 Datasheet(PDF) 6 Page - Renesas Technology Corp |
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F6922 Datasheet(HTML) 6 Page - Renesas Technology Corp |
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6 / 16 page ![]() F6922 Datasheet R35DS0003EU0100 Rev.1.0 Jun 25, 2021 Page 6 2.4 Electrical Specifications Specifications apply when operated at TAMB = 25°C. 2.4.1. DC Electrical Specifications Parameter Symbol Conditions Minimum Typical Maximum Unit Supply Current, Per Channel IDD VDD = 0.95V, IREF = 100 μA 15.5 mA Supply Current, Idle-state [1] IDD_IDLE IIREF = 0μA 1 μA 1. IREF pin can be grounded or floating to achieve idle-state. 2.4.2. RF Electrical Specifications Unless stated otherwise, all specifications are for VDD = 0.95V, IREF = 100 μA, TAMB = 25°C, ZS = ZL = 50Ω, fRF = 17.7 - 21.2GHz. Parameter Symbol Condition Minimum Typical Maximum Unit Gain G fRF = 19.5 GHz 19.5 dB Gain Flatness vs. Frequency GVAR_FREQ fRF = 17.7 - 21.2GHz 1.4 dB Within any 250MHz 0.1 dB Noise Figure NF 1.8 dB Output 1dB Compression Point OP1dB -2.3 dBm Output 3rd Order Intercept Point OIP3 Pin = - 35 dBm/tone, Δf = 1MHz 10 dBm Input Return Loss IRL 28 dB Output Return Loss ORL 24 dB Reverse Isolation ISO 34 dB Channel-to-channel Isolation ISOCH-CH S21-S41 30 dB |
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