ACS108-8TN datasheet(2/14 Pages) STMICROELECTRONICS

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Characteristics

ACS108-8TN

2/14

DocID029064 Rev 1

Characteristics

Table 2: Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current

(180 ° conduction angle)

Ttab = 104 °C

0.8

ITSM

Non repetitive surge peak

on-state current

tp = 16.7 ms

Tj initial = 25 °C

13.7

tp = 20 ms

I2t

I2t value for fusing

tp = 10 ms

Tj = 25 °C

1.1

A2s

VRRM /

VDRM

Repetitive peak off-state voltage

Tj = 125 °C

800

dl/dt

Critical rate of rise of

on-state current

IG = 2 x IGT,

tr ≤ 100 ns

f = 120 Hz

100

A/µs

Vpp(1)

Non repetitive peak pulse line voltage

Tj = 25 °C

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

VGM

Peak positive gate voltage

Tj = 125 °C

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.1

Tstg

Storage junction temperature range

-40 to +150

°C

Maximum operating junction temperature range

-40 to +125

°C

Notes:

(1)According to test described by IEC 61000-4-5 standard and test per Figure 18 .

Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)

Symbol

Test Conditions

Quadrant

Value

Unit

IGT(1)

VOUT = 12 V, RL

= 33 Ω

II - III

Max.

VGT

II - III

Max.

VGD

VOUT = VDRM, RL

= 3.3 kΩ, Tj = 125 °C

II - III

Min.

0.15

IT = 100 mA, gate open

Max.

IG = 1.2 x IGT

Max.

dV/dt

VD = 402 V, gate open, Tj = 125 °C

Max.

600

V/µs

VD = 536 V, gate open, Tj = 125 °C

300

(dl/dt)c

(dl/dt)c < 15 V/µs, turn-

off time ≤ 20 ms, Tj = 125 °C

Min.

0.8

A/ms

VCL

ICL = 1 mA, tp = 1 ms, Tj = 125 °C

Min.

850

Notes:

(1)Minimum IGT is guaranteed at 10% of IGT max.

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