PowerSO-10RF

(straight lead)

1

2

3

Pin connection

Pin

Connection

1

Drain

2

Source

3

Gate

Features

Order code

Frequency

Gain

Efficiency

PD55035STR1-E

500 MHz

12.5 V

35 W

16.9 dB

62%

•

Excellent thermal stability

•

Common source configuration

•

•

New RF plastic package

Description

The device is a common source N-channel, enhancement-mode lateral field-effect

RF power transistor. It is designed for high gain, broad band commercial and

industrial applications. It operates at 12 V in common source mode at frequencies

of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true SMD plastic RF power package,

PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for

car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability,

is the first ST JEDEC approved, high power SMD package. It has been specially

optimized for RF needs and offers excellent RF performance and ease of assembly.

Product status link

PD55035STR1-E

Product summary

Order code

PD55035STR1-E

Marking

PD55035S

Package

PowerSO-10RF

(straight lead)

Packing

Tape and reel

35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

PD55035STR1-E

Datasheet

DS13938 - Rev 1 - March 2022

For further information contact your local STMicroelectronics sales office.

www.st.com