PD55035STR1-E datasheet(3/18 Pages) STMICROELECTRONICS

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Electrical characteristics

Table 3. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 28 V

μA

IGSS

Gate-source leakage current

VGS = ±20 V, VDS = 0 V

±100

VGS(Q)

Gate quiescent voltage

VDS = 28 V, ID = 100 mA

2.0

5.0

VGS(th)

Gate threshold voltage

ID = 250 μA

2.05

2.65

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 3 A

510

GFS

Forward transconductance

VDS = 10 V, ID = 3 A

2.5

Ciss

Input capacitance

VDS = 12.5 V, f = 1 MHz, VGS = 0 V

Coss

Output capacitance

Crss

Reverse transfer capacitance

6.1

Table 4. Gate threshold voltage range groups

Symbol

Parameter

Test conditions

Group

Min.

Max.

Unit

VGS(th)

Gate threshold voltage

ID = 250 μA

2.05

2.20

2.35

2.50

2.65

Note:

PD55035STR1-E is preselected in four groups of gate threshold voltage ranges as per table: the letter

identifying the group to which it belongs is printed on the label of the cardboard box.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

VDD = 12.5 V, IDQ = 200 mA,

POUT = 35 W, f = 500 MHz

GPS

Power gain

16.9

ηD

Drain efficiency

VSWR

Load mismatch

POUT = 35 W, all phases

20:1

Table 6. Moisture sensitivity level

Test methodology

Rating

J-STD-020B

MSL 3

PD55035STR1-E

Electrical characteristics

DS13938 - Rev 1

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