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STGSB200M65DF2AG Datasheet(PDF) 7 Page - STMicroelectronics

Part # STGSB200M65DF2AG
Description  Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGSB200M65DF2AG Datasheet(HTML) 7 Page - STMicroelectronics

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Figure 13. Capacitance variations
GADG250520200737CVR
10 4
10 3
10 2
10 1
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
Cies
Coes
Cres
f = 1 MHz
Figure 14. Gate charge vs gate-emitter voltage
GADG250520200738QVG
18
15
12
9
6
3
0
0
100 200 300 400 500 600
VGE
(V)
Qg (nC)
IC = 200 A
VCC = 520 V,
Figure 15. Switching energy vs collector current
GADG301020200956SLC
40
30
20
10
0
0
100
200
300
400
E
(mJ)
IC (A)
Etot
Eoff
Eon
VCC = 400 V,
RG = 4.7 Ω,
VGE = -8 to 15 V,
TJ = 175 °C
Figure 16. Switching energy vs gate resistance
GADG301020201004SLG
30
25
20
15
10
5
0
0
4
8
12
16
20
E
(mJ)
RG (Ohm)
Eon
Etot
Eoff
VCC = 400 V,
IC = 200 A,
VGE = -8 to 15 V,
TJ = 175 °C
Figure 17. Switching energy vs temperature
GADG250520200743SLT
16
12
8
4
0
0
50
100
150
E
(mJ)
TJ (°C)
Etot
Eoff
Eon
VGE = -8 to 15 V
RG = 4.7 Ω,
VCC = 400 V, IC = 200 A,
Figure 18. Switching energy vs collector emitter voltage
GADG250520200743SLV
24
20
16
12
8
4
0
150
250
350
450
E
(mJ)
VCE (V)
Eon
Eoff
Etot
RG = 4.7 Ω,
IC = 200 A,
VGE = -8 to 15 V,
TJ = 175 °C
STGSB200M65DF2AG
Electrical characteristics (curves)
DS13367 - Rev 3
page 7/17



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