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STGSB200M65DF2AG Datasheet(PDF) 4 Page - STMicroelectronics

Part # STGSB200M65DF2AG
Description  Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGSB200M65DF2AG Datasheet(HTML) 4 Page - STMicroelectronics

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Table 5. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCC = 400 V, VGK = -8 to 15 V,
RG = 4.7 Ω, IC = 200 A
(see Figure 26. Test circuit for inductive
load switching and Figure 28. Switching
waveform)
122
-
ns
tr
Current rise time
54.4
-
ns
Eon(1)
Turn-on switching energy
3.82
-
mJ
td(off)
Turn-off delay time
250
-
ns
tf
Current fall time
76.5
-
ns
Eoff (2)
Turn-off switching energy
6.97
-
mJ
td(on)
Turn-on delay time
VCC = 400 V, VGK = -8 to 15 V,
RG = 4.7 Ω, IC = 200 A, TJ = 175 °C
(see Figure 26. Test circuit for inductive
load switching and Figure 28. Switching
waveform)
128
-
ns
tr
Current rise time
65.6
-
ns
Eon(1)
Turn-on switching energy
7.4
-
mJ
td(off)
Turn-off delay time
266
-
ns
tf
Current fall time
146.6
-
ns
Eoff (2)
Turn-off switching energy
9.16
-
mJ
tsc
Short circuit withstand time
VCC ≤ 400 V, VGE = 15 V,
RG =4.7 Ω, TJstart = 150 °C
6
-
μs
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 200 A, VR = 400 V,
VGE = -8 to 15 V, RG =4.7 Ω
(see Figure 29. Diode reverse recovery
waveform)
-
174.5
-
ns
Qrr
Reverse recovery charge
-
8.6
-
μC
Irrm
Reverse recovery current
-
108.5
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
1503
-
A/µs
Err
Reverse recovery energy
-
2396
-
µJ
trr
Reverse recovery time
IF = 200 A, VR = 400 V,
VGE = -8 to 15 V, RG =4.7 Ω, TJ = 175 °C
(see Figure 29. Diode reverse recovery
waveform)
-
264.3
-
ns
Qrr
Reverse recovery charge
-
25.5
-
µC
Irrm
Reverse recovery current
-
192.2
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
1247
-
A/µs
Err
Reverse recovery energy
-
7117
-
µJ
STGSB200M65DF2AG
Electrical characteristics
DS13367 - Rev 3
page 4/17



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