STM32C011F6U6 datasheet(45/94 Pages) STMICROELECTRONICS

45 / 94 page

DS13866 Rev 3

45/94

STM32C011x4/x6

Electrical characteristics

IDD(Run)

Supply

current in

Run mode

fHCLK = fHSI48/HSIDIV

= 48 MHz

(HSIDIV = 1)

Reduced code(3)

Flash

memory

3.75

78.1

μA/MHz

Coremark

3.50

72.9

Dhrystone

3.55

74.0

Fibonacci

2.75

57.3

WhileLoop

2.15

44.8

Reduced code(3)

SRAM

3.15

65.6

Coremark

3.05

63.5

Dhrystone

3.05

63.5

Fibonacci

3.20

66.7

WhileLoop

2.50

52.1

fHCLK = fHSI48/HSIDIV

= 12 MHz

(HSIDIV = 4)

Reduced code(3)

Flash

memory

1.45

120.8

Coremark

1.40

116.7

Dhrystone

1.40

116.7

Fibonacci

1.15

95.8

WhileLoop

1.00

83.3

Reduced code(3)

SRAM

1.30

108.3

Coremark

1.25

104.2

Dhrystone

1.25

104.2

Fibonacci

1.30

108.3

WhileLoop

1.10

91.7

fHCLK = fHSI48/HSIDIV

= 3 MHz

(HSIDIV = 16)

Reduced code(3)

Flash

memory

0.855

μA

285.0

μA/MHz

Coremark

0.835

278.3

Dhrystone

0.835

278.3

Fibonacci

0.780

260.0

WhileLoop

0.745

248.3

Reduced code(3)

SRAM

0.810

270.0

Coremark

0.800

266.7

Dhrystone

0.800

266.7

Fibonacci

0.810

270.0

WhileLoop

0.770

256.7

1. VDD = 3.0 V, all peripherals disabled

2. Prefetch and cache enabled when fetching from flash

3. Reduced code used for characterization results provided in Table 27.

Table 29. Typical current consumption in Run depending on code executed (continued)

Symbol

Parameter

Conditions

Typ

Unit

Typ

Unit

General(1)

Code

Fetch

from(2)

25 °C

STM32C011F6U6 Datasheet(PDF) 45 Page - STMicroelectronics

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